Building Up New Data-Storage Memory

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Researchers from The University of Tokyo build a proof-of-concept data-storage memory cell based on field-effect transistors using a combination of ferroelectric and antiferroelectric materials with oxide semiconductor channel. By forming the memory units vertically, a larger arial density can be achieved. This work may lead to more practical data storage in mobile devices.

2022.06.12

Press Release

Building Up New Data-Storage Memory

Researchers at The University of Tokyo create vertical field-effect transistors that can be used to store information in a 3D array, which may lead to faster and more energy-efficient data storage

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KOBAYASHI Masaharu Associate Professor

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