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New method takes the uncertainty out of oxide semiconductor layering
Researchers from #UTokyo_IIS develop a nanosheet oxide semiconductor for electronic devices.
View list of research
View list of research
New method takes the uncertainty out of oxide semiconductor layering
New method takes the uncertainty out of oxide semiconductor layering
Researchers from Institute of Industrial Science, The University of Tokyo reported a deposition process for nanosheet oxide semiconductor. The atomic layer deposition technique was demonstrated for producing field effect transistors for 3D integrated circuits at low processing temperature. The resulting devices were shown to have high mobility and reliability and are expected to allow high functionality and manufacturability for a range of electronic devices.
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